ANALYSIS OF 6T SRAM CELL USING FINFET AT NANOMETER REGIME
Main Article Content
Abstract
The fast growing technology developments in the metal oxide semiconductor area have scaled down CMOS to the sub 32nm regime. According to International Technology Roadmap For Semiconductors projection by the 2020, the printed gate lengths will scale down to 12nm. Instead of SiO2 with AL metal gate Hafnium Oxide [HFO2] can be used as a High k material. To increased chip functionality demand, SRAM area have mostly exceed overall chip area. The stability of SRAM cell depends on variation in Process, Temperature and Voltage. This paper will discuss the detail about 6T SRAM stability in standby, read and write mode design considering Double Gate MOSFET at 32nm technology node.
Downloads
Article Details
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License (CC BY-NC-ND 4.0 DEED).
You are free to:
- Share — copy and redistribute the material in any medium or format
- The licensor cannot revoke these freedoms as long as you follow the license terms.
Under the following terms:
- Attribution — You must give appropriate credit , provide a link to the license, and indicate if changes were made . You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
- NonCommercial — You may not use the material for commercial purposes .
- NoDerivatives — If you remix, transform, or build upon the material, you may not distribute the modified material.
- No additional restrictions — You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits.
Notices:
You do not have to comply with the license for elements of the material in the public domain or where your use is permitted by an applicable exception or limitation .
No warranties are given. The license may not give you all of the permissions necessary for your intended use. For example, other rights such as publicity, privacy, or moral rights may limit how you use the material.
Rights of Authors
Authors retain the following rights:
1. Copyright and other proprietary rights relating to the article, such as patent rights,
2. the right to use the substance of the article in future works, including lectures and books,
3. the right to reproduce the article for own purposes, provided the copies are not offered for sale,
4. the right to self-archive the article.