EFFECT OF ANNEALING OF STATE OF ION-IMPLANTED ATOMS OF Mn in Si

Authors

  • B.E. Egamberdiev Tashkent State Technical University, Tashkent, Uzbekistan
  • A.Sh. Mavlyanov

Keywords:

impurities, profiles,, influence,, thermal annealing

Abstract

The paper reports a number of experimental results related to the study of the effect of temperature of annealing and dose of irradiation applying the technique of Rutherford backscattering spectroscopy (RBS) on profiles of distribution of implanted atoms of Mn in Si. The results are proved by similar experimental results obtained by using Secondary Ion-Mass Spectrometry. The influence of thermal annealing on Mn and other impurities (especially oxygen) distribution profile was studied. The authors have identified how RBS technique couldbe implemented for determination of distribution profiles of concentrations of doped impurities and their interaction with each other in the bulk of material.

Downloads

Published

2021-03-28

Issue

No. 1 (2020): Special Issue

Section

Articles

License

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License (CC BY-NC-ND 4.0 DEED).

You are free to:

  1. Share — copy and redistribute the material in any medium or format
  2. The licensor cannot revoke these freedoms as long as you follow the license terms.

Under the following terms:

  1. Attribution — You must give appropriate credit , provide a link to the license, and indicate if changes were made . You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
  2. NonCommercial — You may not use the material for commercial purposes .
  3. NoDerivatives — If you remix, transform, or build upon the material, you may not distribute the modified material.
  4. No additional restrictions — You may not apply legal terms or technological measures that legally restrict others from doing anything the license permits.

Notices:

You do not have to comply with the license for elements of the material in the public domain or where your use is permitted by an applicable exception or limitation .

No warranties are given. The license may not give you all of the permissions necessary for your intended use. For example, other rights such as publicity, privacy, or moral rights may limit how you use the material.

 

Rights of Authors

Authors retain the following rights:
1. Copyright and other proprietary rights relating to the article, such as patent rights,
2. the right to use the substance of the article in future works, including lectures and books,
3. the right to reproduce the article for own purposes, provided the copies are not offered for sale,
4. the right to self-archive the article.