A NOVEL DOUBLE GATE JUNCTION-LESS MOSFET USING GERMANIUM

Authors

  • KUMAR P. LONDHE Department of E&TC JSPM’s RajarshiShahu Collage Of Engineering, Pune, India
  • DR. Y. V. CHAVAN Department of E&TC JSPM’s RajarshiShahu Collage Of Engineering, Pune, India

Keywords:

Double-gate junctionless transistor, scaling, subthreshold slope.

Abstract

In this paper, a novel Double gate junctionless MOSFET is proposed using germanium as the channel material. In early days germanium was mainly used for the fabrication of semiconductor devices, but due to its highleakage current it was unsuitable for high temperature applications though its mobility is higher than silicon. So to overcome this problem a high-k dielectric gate oxide such as HfO2is used. The performance of 16-nm germanium symmetric double-gate junctionless transistor (Ge-DGJL T) is evaluated and compared with different gate materials and analysis has been carried out by using 2D-Cogenda Visual TCAD simulator. The performance parameters, such as drain current (Id), threshold voltage (Vt), drain induced barrier lowering (DIBL), subthreshold slope (SS), are systematically investigated for n-type Ge-DGJLT

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Published

2021-03-27

Issue

2016: ICITER

Section

Articles

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