STUDY OF TECHNOLOGICAL PROCESSES OF DETECTORS WITH Si(Li) SEMICONDUCTOR USING COMPUTER-MATHEMATICAL MODELS

Authors

  • G. J. Ergashev International Islamic Academy of Uzbekistan. Tashkent, Uzbekistan
  • Yo. K. Toshmurodov Karshi branch of Tashkent irrigation and Agricultural Engineering Institute, Karshi, Uzbekistan
  • F. K. Islamova Tashkent Institute of Chemical Technology. Tashkent, Uzbekistan.

DOI:

https://doi.org/10.26662/ijiert.v12i3.pp1-6

Keywords:

Computer mathematical model, semiconductor detector, current, voltage, tape, coordinate-sensitive.

Abstract

The article analyzed the use of semiconductor nuclear radiation detectors, which are of great importance in the field of electronic technologies today. The volt-ampere characteristics of large nuclear radiation eight-band semiconductor coordinate-sensitive detectors were compared using a mathematical model. The values of the volt-ampere characteristics of all the bands of the semiconductor eight-band detectors were compared, and this process was carried out using the MATLAB software package. Mathematical modeling used the method of least squares. The obtained results showed that the proposed equivalent electrical circuit allows to describe the current and voltage values of Si(Li) p-i-n structures with high accuracy. It was found that the largest difference in the ratio of the current strength values in the results obtained by practice and modeling is 0.2358.

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Published

2025-03-13

Issue

Vol. 12 No. 3 (2025): IJIERT

Section

Engineering and Technology

License

Copyright (c) 2025 International Journal of Innovations in Engineering Research and Technology

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