TEMPERATURE AND DEPENDENCE OF PHOTOCONDUCTIVITY AND STRUCTURES MN4 SI 7-SI- MN4 AND7

Authors

  • T. S. Kamilov Tashkent State Technical University
  • M. M. Shoabdurachimova Tashkent State Technical University
  • I. M.Kokanbayev Kokand State Pedagogical Institute
  • A. J. Husanov Kokand State Pedagogical Institute
  • K. K. Kurbonaliev Kokand State Pedagogical Institute
  • O. N. Husanov Kokand State Pedagogical Institute, Bachelor

DOI:

https://doi.org/10.17605/OSF.IO/7MFC2

Keywords:

manganese, higher silicides, silicon, diffusion, contact, surface, infrared radiation, temperature.

Abstract

This article studies the effect of infrared radiation and temperatureson the parameters of higher manganese silicides on the surface of silicon created on the basis of impurity atoms of manganese. The possibility of creating effective thermocouples and photodetectors based on the structures of SixMn1-x-Si<Mn>- MnxSi1-x is shown.

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Published

2022-12-05

Issue

Vol. 9 No. 12 (2022): IJIERT

Section

Articles

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