B.E. Egamberdiev, A.Sh. Mavlyanov. EFFECT OF ANNEALING OF STATE OF ION-IMPLANTED ATOMS OF Mn in Si. Int. j. innov. eng. res. technol. [Internet]. 2021 Mar. 28 [cited 2024 Nov. 29];(1):1-5. Available from: https://repo.ijiert.org/index.php/ijiert/article/view/2396