B.E. EGAMBERDIEV; A.SH. MAVLYANOV. EFFECT OF ANNEALING OF STATE OF ION-IMPLANTED ATOMS OF Mn in Si. International Journal of Innovations in Engineering Research and Technology, Maharashatra, India, n. 1, p. 1–5, 2021. Disponível em: https://repo.ijiert.org/index.php/ijiert/article/view/2396.. Acesso em: 30 nov. 2024.