B.E. Egamberdiev, A.Sh. Mavlyanov. EFFECT OF ANNEALING OF STATE OF ION-IMPLANTED ATOMS OF Mn in Si. Int. j. innov. eng. res. technol. 2021;(1):1-5. Accessed November 29, 2024. https://repo.ijiert.org/index.php/ijiert/article/view/2396