EFFECT OF ANNEALING OF STATE OF ION-IMPLANTED ATOMS OF Mn in Si
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Abstract
The paper reports a number of experimental results related to the study of the effect of temperature of annealing and dose of irradiation applying the technique of Rutherford backscattering spectroscopy (RBS) on profiles of distribution of implanted atoms of Mn in Si. The results are proved by similar experimental results obtained by using Secondary Ion-Mass Spectrometry. The influence of thermal annealing on Mn and other impurities (especially oxygen) distribution profile was studied. The authors have identified how RBS technique couldbe implemented for determination of distribution profiles of concentrations of doped impurities and their interaction with each other in the bulk of material.
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